Patterning process schematic diagram and patterned EL diode image using the development process
The Korea Advanced Institute of Science and Technology announced on the 16th that a team led by Professor Lee Jeong-yong of the Department of Electrical and Electronic Engineering has developed a technology to produce high-efficiency RGB patterned light emitting diodes without direct UV or electron beam treatment or solution confinement film on the perovskite quantum dot layer.
Perovskite quantum dots are attracting attention as next-generation display light-emitting materials because they have high external quantum efficiency and color purity, and the band gap can be adjusted depending on the type and ratio of halide anions inside the quantum dot.
However, since insulating organic molecules with long carbon chains surround the quantum dots, their performance is low when applied to electronic devices, and they are vulnerable to UV and electron beam treatment used in the patterning process. The pixel patterning process is very difficult.
The development process improves light emitting diode performance by exchanging insulating organic ligands around perovskite quantum dots with organic ligands with advantageous charge transport. In addition, it is possible to freely change the emission color of the quantum dot thin film through halide anion exchange.
The research team proposed a patterning process that changes the color of only a part of the perovskite quantum dot thin film, and succeeded in producing a light emitting diode patterned with RGB colors at high speed without direct UV or electron beam treatment.
Professor Lee Jung-yong said, “The developed perovskite quantum dot thin film patterning process has solved the problems facing the solution process-based perovskite quantum dot patterning process, and it will be applicable to the realization of next-generation perovskite quantum dot displays.” It is expected to be widely used in various optoelectronic devices such as , solar cells and optical computing devices.”